********************************************************************************
* UnitedSiC G4 1700V-400mohm SiC Cascode Spice Circuit Model rev1.0
* Copyright 2020 United Silicon Carbide, Inc.
* This is a PRELIMINARY Spice Model of UF3C170400B7S
*
*
* The model does not include all possible conditions and effects, 
* in particular it doesn't include: 
*	Self heating
*	leakage current in blocking state
*	Drain to source breakdown is notional only
*
********************************************************************************

*** UF3C170400B7S ***
.subckt UF3C170400B7S nd ng ns nss
Ld	nd	nd1		3n
Lmd	ns1	nd2		0.8n
Ljg	ng1	ns3		1n
Lmg ng ng2 		10n
Lms	ns2	ns3		1.7n
Ls	ns3	ns		2n
xj1	nd1	ng1	ns1	jfet_G3_1700V_Ron params: Ron=400m Rgon=6 Rgoff=6
xm1	nd2	ng2	ns2	mfet164a
Cgd ng2 nd1     2p				 
Lss ns2 nss     10n
.ends

******************* 1700V JFETs ***********************
.subckt jfet_G3_1700V_Ron d g s params: Ron=0 Rgon=0 Rgoff=0
*#ASSOC Category="N-Channel JFET" Symbol=njfet
.param Ron1={Ron}
.param Rgon1={Rgon}
.param Rgoff1={Rgoff}
.param a= {400m / {Ron}}
X1 di gi s jfet_G3_1700V params: ascale={a}
XCgs gi s Cgs_1700V params: acgs={a}
XCgd gi di Cgd_1700V params: acgd={a}
Rd d di Rtemp {320m/{a}}
.MODEL Rtemp RES (TC1=3.425e-3, TC2=4.292e-5)
GRg g gi value={if(v(g,gi)>0,v(g,gi)/{Rgon1},v(g,gi)/{Rgoff1})}
.ends

*********** Shared Subcircuit for 1700V JFETs *********
.subckt jfet_G3_1700V d g s Params: ascale=0

											
.param Fc1=0.5
.param Pb1=3.25
.param M1=0.5
.param Vd0=1360
			 
.param gos={1.229e-3*{ascale}}
.param gfs={9.39*{ascale}}
.param f=1.4
.param vth=-9

.param cgs1=2.1e-10
.param cgd1=6.0e-12

.param bt={({f}*{gfs}+2*{gos}*{Vd0}/{vth})/2/(-{vth})}
.param lamd={1*{gos}/{bt}/{vth}/{vth}}
.param cgs0={pwr((1+20/{Pb1}),{M1})*{cgs1}}
.param cgd0={pwr((1+{Vd0}/{Pb1}),{M1})*{cgd1}}

J1 d g s jfet_1700 
Dgs g s Dgs_iv 
Dgd g d Dgd_iv 
Rgs  g s 1Meg
Rgd  g  d 10Meg

.MODEL jfet_1700 NJF(
+ Beta={{bt}} BetaTce=0 Vto={vth} VtoTc=0  lambda={lamd}
+ Is=1e-30 
+ Cgs={{cgs0}*{ascale}} Cgd={{cgd0}*{ascale}} Fc={Fc1} Pb={Pb1}
+ M={M1})

.MODEL Dgs_iv D (CJO=0 BV=40 IS=1e-50 ISR=1e-50 Eg=3.5 Rs=0)
.MODEL Dgd_iv D (CJO=0 BV=2150 IS=1e-50 ISR=1e-50 Eg=3.5 Rs={9.62m/{ascale}})

.ends 

* Cgs network	
.subckt Cgs_1700V g s params: acgs=0
.param c0=1n
.param vsgmin=-2
.param vsgmax=15
.param a1={0.18n*{acgs}}
.param b1=1 
.func Qgs1(u) {- {a1} / {b1} *(exp(- {b1} *u)-1)}  

.param a2={0.15n*{acgs}}
.param b2=0.5
.param c2=9.8

.func Qgs2(u) 
+	{if(abs(u)<{vsgmax},
+	{a2}*u + {a2}*(-{b2})*log(cosh((u-{c2})/-{b2}))
+	-{a2}*(-{b2})*log(cosh(-{c2}/-{b2})), 
+	{a2}*{vsgmax} + {a2}*(-{b2})*log(cosh(({vsgmax}-{c2})/-{b2}))
+	-{a2}*(-{b2})*log(cosh(-{c2}/-{b2})))} 

E1 s m1 value={v(s,g)-Qgs1(limit(v(s,g),-{vsgmax},{vsgmax}))/{c0}}
C01 m1 g {c0}
E2 s m2 value={v(s,g)-Qgs2(limit(v(s,g),-{vsgmax},{vsgmax}))/{c0}}
C02 m2 g {c0}

.ends 

* Cgd network
.subckt Cgd_1700V g d params:acgd=0

.param c0=1n

.param a1={0.05n*{acgd}}
.param b1=0.1
.param c1=17.6
.param vdgmax1=30

.func Qgd1(u) 
+	{if(abs(u)<{vdgmax1},
+	{a1}*u + {a1}*(-{b1})*log(cosh((u-{c1})/-{b1}))
+	-{a1}*(-{b1})*log(cosh(-{c1}/-{b1})), 
+	{a1}*{vdgmax1} + {a1}*(-{b1})*log(cosh(({vdgmax1}-{c1})/-{b1}))
+	-{a1}*(-{b1})*log(cosh(-{c1}/-{b1})))} 

.param a2={0*{acgd}}
.param b2=0.5
.param c2=9.5
.param vdgmax2=15

.func Qgd2(u) 
+	{if(abs(u)<{vdgmax2},
+	(-1)*({a2}*u + {a2}*(-{b2})*log(cosh((u-{c2})/-{b2}))
+	-{a2}*(-{b2})*log(cosh(-{c2}/-{b2}))), 
+	(-1)*({a2}*{vdgmax2} + {a2}*(-{b2})*log(cosh(({vdgmax2}-{c2})/-{b2}))
+	-{a2}*(-{b2})*log(cosh(-{c2}/-{b2}))))}



E1 d m1 value={v(d,g)-Qgd1(limit(v(d,g),-{vdgmax1},+{vdgmax1}))/{c0}}
C01 m1 g {c0}
*E2 d m2 value={v(d,g)-Qgd2(limit(v(d,g),-{vdgmax2},+{vdgmax2}))/{c0}}
*C02 m2 g {c0}

.ends 
 
*** Si MOS Model ***
.SUBCKT	mfet164a	 4 1 2	
							
*Gate-->1  Drain-->4  Src-->2									
.param Ascale=		0.895							
***Ascale used to scale the active area of the mosfet.It could be any positive data									
M1  3 5 9 9 NMOS W={	{Ascale}*	2		}	L=	0.00000033		
M2  9 5 9 3 PMOS W={	{Ascale}*	2	}	L=	0.00000036
Ld 4 7 0.1p									
Ls 9 2 0.1p									
Lg 1 8 0.1p									
R1 7 3 RTEMP {		0.0051021	/	{Ascale}	}				
RG 8 5 	4.2								
CGS 5 9	{	3.575E-10	*	{Ascale}	}				
DBD 9 3     DBD									
									
**************************************************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3 									
+ TOX    = 		6.00E-08							
+ NSUB   = 		3.8E+17							
+ VTO=		4.5							
+ THETA  = 		0							
+ kp= 		1.788E-05							
+ TPG = 1  )									
**************************************************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3 	
+ TOX    = 		6.00E-08	
+ NSUB   = 		4.8E+16		
+ TPG = -1  )	
**************************************************************************************************************
.MODEL DBD D (CJO={			{Ascale}	*	2.6E-10	}			
+ VJ= 	0.7								
+ M= 	0.5								
+ RS= 	{0.007/	{Ascale}	}						
+ IS= { {AScale} *		1.706E-12	}						
+ TT= 	8.00E-09								
+ BV= 	25								
+ IBV= 	0.00025	)							
**************************************************************************************************************
.MODEL RTEMP RES (TC1=3E-3)									
.ENDS

*** End of File ***